Paper
24 September 1996 Wafer bonding technique for fabricating 1.5-μm InGaAs/InGaAsP pillar-free microdisk lasers
Sheng Li Wu, Lijun Wang, Jianping Zhang, Liwei Wang, Seng Tiong Ho
Author Affiliations +
Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251909
Event: Photonics China '96, 1996, Beijing, China
Abstract
A new wafer bonding-etching technique has been developed successfully for micro-disk laser fabrication. Pillar-free micro-disk lasers have been realized. The micro-disk is placed on low refractive index material such as SiO2 and surrounded by SiO2 and air. The pillar-free micro-disk laser shows more solid than the pillar-supported micro-disk lasers. It has similar threshold pump power compared with the pillar-supported micro-disk lasers.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sheng Li Wu, Lijun Wang, Jianping Zhang, Liwei Wang, and Seng Tiong Ho "Wafer bonding technique for fabricating 1.5-μm InGaAs/InGaAsP pillar-free microdisk lasers", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251909
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KEYWORDS
Semiconducting wafers

Laser bonding

Fabrication

Semiconductor lasers

Laser damage threshold

Wafer bonding

Waveguides

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