Research on P+-GexSi1-x/p-Si heterojunction internal photoemission long-wavelength infrared detector

Ruizhong Wang; Peiyi Chen; Peihsin Tsien; Guangli Luo; Kangli Zheng; Junming Zhou

doi:10.1117/12.252093

25 September 1996 Research on P+-GexSi1-x/p-Si heterojunction internal photoemission long-wavelength infrared detector

Ruizhong Wang, Peiyi Chen, Peihsin Tsien, Guangli Luo, Kangli Zheng, Junming Zhou

Proceedings Volume 2894, Detectors, Focal Plane Arrays, and Applications; (1996) https://doi.org/10.1117/12.252093
Event: Photonics China '96, 1996, Beijing, China

Abstract

In this paper, we present a new electrode structure for P⁺-Ge_xSi_1-x/p-Si heterojunction internal photoemission (HIP) long-wavelength infrared detector (LWIRD). The advantages of this structure has been verified by experimental results. The electrical and photoresponse characteristics of the detector with 100 nm-thick Ge_0.3Si_0.7 layer at 77 K are reported. In addition, a new analytic quantum efficiency model for P⁺-Ge_xSi_1-x/p-Si HIP LWIRD is built based on modification of old model. Comparing with old models, it is characterized in that the impact of carriers transporting on quantum efficiency is considered. It is shown that this model is more consistent with actuality than old model through the comparison between the theoretical results and experimental results. The optimal thickness of Ge_xSi_1-x layer can be estimated by this model and the result also agrees with the experiment.

Citation Download Citation

Ruizhong Wang, Peiyi Chen, Peihsin Tsien, Guangli Luo, Kangli Zheng, and Junming Zhou "Research on P+-GexSi1-x/p-Si heterojunction internal photoemission long-wavelength infrared detector", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); https://doi.org/10.1117/12.252093

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