Atomic-layer-deposited TiO2 dielectric coatings

A. Rosental; A. Tarre; A. Gerst; P. Adamson; V. Sammelselg; T. Uustare

doi:10.1117/12.266545

4 February 1997 Atomic-layer-deposited TiO₂ dielectric coatings

A. Rosental, A. Tarre, A. Gerst, P. Adamson, V. Sammelselg, T. Uustare

Proceedings Volume 2967, Optical Inorganic Dielectric Materials and Devices; (1997) https://doi.org/10.1117/12.266545
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia

Abstract

The possibilities of the in situ real-time Brewster-angle interferometric reflectance probe to follow cycle-dependent film-quality changes during the atomic layer deposition (ALD) are investigated. Experiments are centered around the growth of amorphous TiO₂ thin films on fused quartz substrates in a traveling-wave reactor using TiCl₄ and H₂O as reactants. It is concluded that ALD has prospects for the preparation of microstructurally homogeneous low- optical-loss TiO₂ films in case the precise thickness control is needed. The main problem is the microporosity of the films and as a result their moderate refractive index.

Citation Download Citation

A. Rosental, A. Tarre, A. Gerst, P. Adamson, V. Sammelselg, and T. Uustare "Atomic-layer-deposited TiO₂ dielectric coatings", Proc. SPIE 2967, Optical Inorganic Dielectric Materials and Devices, (4 February 1997); https://doi.org/10.1117/12.266545

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