Strained multiple-quantum-well lasers grown on GaSb emitting between 2 and 2.4 um

Alexei N. Baranov; Y. Cuminal; N. Bertru; Claude L. Alibert; Andre Francis Joullie

doi:10.1117/12.264141

23 January 1997 Strained multiple-quantum-well lasers grown on GaSb emitting between 2 and 2.4 um

Alexei N. Baranov, Y. Cuminal, N. Bertru, Claude L. Alibert, Andre Francis Joullie

Proceedings Volume 2997, Integrated Optics Devices: Potential for Commercialization; (1997) https://doi.org/10.1117/12.264141
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Low threshold lasers based on GaInSbAs/GaSb type-II QW structures operating between 2 and 2.4 micrometers at room temperature have been fabricated. The RT threshold current density as low as 305 A/cm² was obtained for a 900- micrometers -long laser emitting at 2.36 micrometers . High efficiency of indirect radiative recombination is explained by accumulation of holes in potential wells situated in barrier layers near the QW interfaces.

Citation Download Citation

Alexei N. Baranov, Y. Cuminal, N. Bertru, Claude L. Alibert, and Andre Francis Joullie "Strained multiple-quantum-well lasers grown on GaSb emitting between 2 and 2.4 um", Proc. SPIE 2997, Integrated Optics Devices: Potential for Commercialization, (23 January 1997); https://doi.org/10.1117/12.264141

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