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Gold and silver Schottky diodes were fabricated on a structured surface of an n-type GaAs substrate. The structures surface, consisting of a square-wave grating with a period of 450 nm and a depth of 15 nm, was fabricated using the techniques of holography and wet chemical etching. Measurements of the reflected intensity and photocurrent were made at the HeNe wavelength of 633 nm over a range of incident angels. It was observed that the grating coupler enhanced the photodetection for p-polarized light through surface plasmon coupling at the resonant angle. A comparative study of similarly fabricated Au and Ag Schottky diodes were made, along with a comparison to flat, non- structured devices from the same substrate. Fabrication induced shift in the angular position of the resonant angle is also demonstrated.
Kannan Krishnaswami,Robert J. Tremblay II,William T. Goodhue, andAram S. Karakashian
"Comparative study of surface-plasma enhanced-grating coupled detectors", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271173
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Kannan Krishnaswami, Robert J. Tremblay II, William T. Goodhue, Aram S. Karakashian, "Comparative study of surface-plasma enhanced-grating coupled detectors," Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271173