Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes

Sean L. Rommel; David N. Erby; Wei Gao; Paul Raymond Berger; George J. Zydzik; W. W. Rhodes; H. M. O'Bryan; Deborah L. Sivco; Alfred Y. Cho

doi:10.1117/12.271171

15 April 1997 Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes

Sean L. Rommel, David N. Erby, Wei Gao, Paul Raymond Berger, George J. Zydzik, W. W. Rhodes, H. M. O'Bryan, Deborah L. Sivco, Alfred Y. Cho

Author Affiliations +

Proceedings Volume 2999, Photodetectors: Materials and Devices II; (1997) https://doi.org/10.1117/12.271171
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Metal-semiconductor-metal (MSM) photodiodes with electrodes fabricated from the transparent conductor cadmium tin oxide (CTO) have been shown to double photoresponsivity. Their bandwidths, however, are significantly lower than those of MSMs fabricated with standard Ti/Au contacts. Though MSMs are generally believed to be limited by the transit time of electrons, it is possible the larger resistivity of CTO has become a significant factor, making the MSMs RC time constant limited instead. Previous models of MSMs only account for one of the two back-to-back Schottky diodes. A new model which takes into account both the forward and reverse biased junctions has been developed from the small signal model of a Schottky diode. This new model was fit to data obtained from S-parameter measurements, and incorporates both the transit time response and RC time constant response.

Citation Download Citation

Sean L. Rommel, David N. Erby, Wei Gao, Paul Raymond Berger, George J. Zydzik, W. W. Rhodes, H. M. O'Bryan, Deborah L. Sivco, and Alfred Y. Cho "Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271171

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