Paper
15 April 1997 Monolithically integrated resonant-cavity photodetectors for measurement and feedback control of spontaneous and stimulated emission
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Abstract
This paper presents a study of the physics and applications of resonant cavity pin photodetectors strategically positioned within the optical structure of vertical microcavity surface emitting devices. Conventional AlGaAs resonant cavity light-emitting diodes and vertical cavity surface emitting lasers (VCSELs) emitting near 780 nm are examined. However, the structures include resonant cavity detectors placed within the upper or lower distributed Bragg reflectors. The detectors consist of an undoped quantum well absorbing layer positioned at an antinode of the resonant standing wave.A classical model is developed to examine the detector's spectral responsivity. This embedded detector scheme provides an effective means for studying the spontaneous and stimulated emission components of microcavity light emitting devices. The photocurrent from the intracavity detector is proportional to the microcavity output power over a broad emission range. This is especially useful for the control of VCSEL output power by means of a feedback circuit.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James A. Lott "Monolithically integrated resonant-cavity photodetectors for measurement and feedback control of spontaneous and stimulated emission", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271174
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KEYWORDS
Sensors

Quantum wells

Vertical cavity surface emitting lasers

Optical microcavities

Photodetectors

Optical resonators

Reflectivity

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