Normal-incidence infrared modulators based on InAs/GaSb/AlSb quantum wells grown by molecular beam epitaxy

Jody Alperin; Qinghong Du; Wen I. Wang

doi:10.1117/12.271177

15 April 1997 Normal-incidence infrared modulators based on InAs/GaSb/AlSb quantum wells grown by molecular beam epitaxy

Jody Alperin, Qinghong Du, Wen I. Wang

Author Affiliations +

Proceedings Volume 2999, Photodetectors: Materials and Devices II; (1997) https://doi.org/10.1117/12.271177
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

We report normal incidence infrared electroabsorption modulation utilizing the Stark effect to induce (Gamma) -L transitions in asymmetric AlSb/InAs/Al_0.4Ga_0.6Sb/GaSb/AlSb quantum wells on a undoped GaSb substrate grown by molecular beam epitaxy. The normal incidence measurements of the fabricated devices were performed under various electric fields at T equals 77K using a Fourier transform infrared spectrometer. The modulation absorption was found to be directly proportional to applied bias. The largest infrared absorption at 5 micrometers with an absorption coefficient of 3200 cm^-1 was obtained at 14 V reverse bias. Our results indicate the potential of this novel structure for application in normal incidence modulators.

Citation Download Citation

Jody Alperin, Qinghong Du, and Wen I. Wang "Normal-incidence infrared modulators based on InAs/GaSb/AlSb quantum wells grown by molecular beam epitaxy", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271177

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