Paper
15 May 1997 CO-OP DOE foundry process results
Thomas R. Werner, J. Allen Cox, J. Gieske, K. Hewitt, Kannan Raj, Ravindra A. Athale
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Abstract
The DARPA-funded Consortium for Optical and Optoelectronic Technologies for Computing (CO-OP) recently completed the first DOE Foundry run delivering ten samples to each of nineteen users, each with a unique design. The binary optics process was used to provide a maximum of eight phase levels at a design wavelength of 850 nm. Averaged over all users and all samples, an etch depth error of one percent and alignment accuracy within 0.25 micron were achieved. This paper summarizes the details of the process results.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas R. Werner, J. Allen Cox, J. Gieske, K. Hewitt, Kannan Raj, and Ravindra A. Athale "CO-OP DOE foundry process results", Proc. SPIE 3010, Diffractive and Holographic Device Technologies and Applications IV, (15 May 1997); https://doi.org/10.1117/12.274405
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

Etching

Optical alignment

Diffractive optical elements

Photomasks

Diffraction

Error analysis

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