Practical resists for 193-nm lithography using 2.38% TMAH: physicochemical influences on resist performance

Charles R. Szmanda; Jaclyn J. Yu; George G. Barclay; James F. Cameron; Robert J. Kavanagh; Robert F. Blacksmith; Peter Trefonas III; Gary N. Taylor

doi:10.1117/12.275836

7 July 1997 Practical resists for 193-nm lithography using 2.38% TMAH: physicochemical influences on resist performance

Charles R. Szmanda, Jaclyn J. Yu, George G. Barclay, James F. Cameron, Robert J. Kavanagh, Robert F. Blacksmith, Peter Trefonas III, Gary N. Taylor

Author Affiliations +

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275836
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

This paper describes some of the basic physicochemical considerations necessary to design a resist for use in 193 nm lithography. Of fundamental importance are the photoreaction which generates the photoacid, the reactivity of the photoacid the dissolution of the resist in the developer, and the adhesion of the images to the substrate. These phenomena are discussed and we show results that demonstrate progress in these areas. In addition, we show preliminary etch resistance of our polymer system and selected lithographic results.

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Charles R. Szmanda, Jaclyn J. Yu, George G. Barclay, James F. Cameron, Robert J. Kavanagh, Robert F. Blacksmith, Peter Trefonas III, and Gary N. Taylor "Practical resists for 193-nm lithography using 2.38% TMAH: physicochemical influences on resist performance", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275836

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