Paper
7 July 1997 Reactivity and kinetic parameters for UVIIHS
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Abstract
The 'developable' chemical image generated in chemically amplified DUV resists is only indirectly related to the photochemical image generated on exposure. As a consequence the factors which ultimately affect the performance of the resist are determined by the thermally activated reactions occurring after the exposure step. For this reason it is important to understand the details of this chemistry in order to understand the effects that changes in formulation and process conditions have on factors such as linewidth and process latitude. In this report we describe studies on the deprotection reactions which occur in films of UVIIHS during the post exposure bake step. Experimentally measured deprotection rate data are compared to simulations employing a stochastic mechanism simulator.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory M. Wallraff, Juliann Opitz, William D. Hinsberg, Frances A. Houle, James W. Thackeray, Theodore H. Fedynyshyn, Doris Kang, and Martha M. Rajaratnam "Reactivity and kinetic parameters for UVIIHS", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275851
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Systems modeling

Polymers

Chemistry

Stochastic processes

Catalysis

Deep ultraviolet

Atmospheric modeling

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