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26 August 1997 Photoelectric properties of Pb1-x-yGeySnx:In epitaxial films
Vladimir F. Chishko, A. I. Dirotchka, Igor L. Kasatkin, Alexandre G. Moisseenko, V. V. Osipov, Evgenii I. Slyn'ko, Vyacheslav N. Vasil'kov
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280413
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
Epitaxial films Pb1-x-yGeySnxTe:In grown by 'hot wall' method on insulating substrates BaF2 are studied. Samples are made in Ukrainian Institute of Problems of the Study of Materials. Measurements of photoconductivity spectra and temperature dependence of resistance are carried out at different background fluxes. The correlation between a cutoff wavelength and thermoactivation energies of resistance of studied samples was observed. The observed phenomena are explained on the basis of a two-electron Indium impurity center model. Energies of local oscillations of impurity centers are determined.
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Vladimir F. Chishko, A. I. Dirotchka, Igor L. Kasatkin, Alexandre G. Moisseenko, V. V. Osipov, Evgenii I. Slyn'ko, and Vyacheslav N. Vasil'kov "Photoelectric properties of Pb1-x-yGeySnx:In epitaxial films", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280413
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KEYWORDS
Resistance
Germanium
Indium
Lead
Temperature metrology
Tin
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