Plasma reactor etch modeling using inductively coupled plasma spectroscopy diagnostic techniques

Karl E. Mautz

doi:10.1117/12.284643

25 August 1997 Plasma reactor etch modeling using inductively coupled plasma spectroscopy diagnostic techniques

Karl E. Mautz

Proceedings Volume 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III; (1997) https://doi.org/10.1117/12.284643
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

An ICP spectrometer was modified to sample both gaseous and liquids in a controlled format. The gas proportioner was characterized and the ICP sample flow rate was adjusted to prevent negative effects on the plasma profile. Spectra comparisons were done using Ar to compare the effect of sampling techniques. The comparison of spectra from the ICP and the plasma etch tools from simple gas mixtures resulted in similar atomic spectra, although the spectral intensity distribution differed. Characterizations were done on moisture contamination, additive gas effects, loading effects, ionic dopant levels, and metallic silicide films. As the samples became more complex, the resulting spectra differences between plasma sources became less similar.

Citation Download Citation

Karl E. Mautz "Plasma reactor etch modeling using inductively coupled plasma spectroscopy diagnostic techniques", Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); https://doi.org/10.1117/12.284643

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