InGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours

Shuji Nakamura

doi:10.1117/12.316666

7 July 1998 InGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours

Shuji Nakamura

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316666
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

InGaN multi-quantum-well structure laser diodes with Al_0.14Ga_0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of longer than 10,000 hours under continuous-wave operation at 20 degree(s)C. The activation energy of the lifetime was estimated to be 0.5 eV. With the operating current increasing above the threshold, a self- pulsation with a high frequency of 3.5 GHz was observed.

Citation Download Citation

Shuji Nakamura "InGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316666

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