Many-body effects in the gain spectra of GaN/AlGaN quantum wells with localized states

Takeshi Uenoyama

doi:10.1117/12.316650

7 July 1998 Many-body effects in the gain spectra of GaN/AlGaN quantum wells with localized states

Takeshi Uenoyama

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316650
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We have evaluated the optical gain of GaN/AlGaN quantum well structures with localized states, taking into account the Coulomb interaction. The localized states are introduced in the well as quantum dot-like subband states. We have used the temperature Green's function formalism to treat the many-body effects and have found a new excitonic enhancement of the optical gain involved the localized states. This enhancement is stronger than the conventional Coulomb enhancement. It might play an important role to reduce the threshold carrier density.

Citation Download Citation

Takeshi Uenoyama "Many-body effects in the gain spectra of GaN/AlGaN quantum wells with localized states", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316650

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