Polarization anisotropy in ordered GaInP optoelectronic devices

Erik Greger; T. Kippenberg; Peter Kiesel; Michael Moser; Karlheinz H. Gulden; Gottfried H. Doehler

doi:10.1117/12.316718

7 July 1998 Polarization anisotropy in ordered GaInP optoelectronic devices

Erik Greger, T. Kippenberg, Peter Kiesel, Michael Moser, Karlheinz H. Gulden, Gottfried H. Doehler

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316718
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

GaInP is a very important material for opto-electronic components operating in the visible spectra range ((lambda) equals 630...690 nm). Depending on MOVPE growth conditions, spontaneous ordering occurs which is established in form of a monoatomic superlattice arrangement of the group III components in {111}_B planes. The reduced symmetry in ordered crystals leads to a polarization anisotropy of the absorption coefficient, which was investigated with transmission experiments. The polarization anisotropy was utilized to realize polarization threshold switches and polarization detectors. The polarization threshold switches consist of a n-i-p photodiode with an intrinsically integrated junction field-effect-transistor amplifier. The polarization anisotropy of the ordered GaInP absorption layer results in a polarization dependent source- gate photocurrent. This finally determines the working point of the device and yields in a very sensitive control of the source-drain conductivity G_SD by the polarization of the incident light. First measurements reveal a switching contrast of 50 dB between light linearly polarized along the [011] and [01-1] crystal direction, respectively.

Citation Download Citation

Erik Greger, T. Kippenberg, Peter Kiesel, Michael Moser, Karlheinz H. Gulden, and Gottfried H. Doehler "Polarization anisotropy in ordered GaInP optoelectronic devices", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316718

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