Paper
7 July 1998 Theoretical and experimental analysis of the spontaneous emission and threshold current of edge-emitting Bragg microcavity laser structures
Graham M. Berry, Gareth D. Lewis, Huw D. Summers, Peter Blood, John Stuart Roberts
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Abstract
Spontaneous emission control has been achieved in GaAs/AlGaAs quantum well lasers by the use of Distributed Bragg microcavity perpendicular to the quantum wells. The room temperature emission is inhibited whilst below 130 K there is an enhancement. These changes to the spontaneous emission process directly effect the threshold current producing a 25% reduction at room temperature. Theoretical modeling of the lasers is in agreement with the experimental results and highlights the effect of the microcavity on the field-dipole interaction.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Graham M. Berry, Gareth D. Lewis, Huw D. Summers, Peter Blood, and John Stuart Roberts "Theoretical and experimental analysis of the spontaneous emission and threshold current of edge-emitting Bragg microcavity laser structures", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316687
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KEYWORDS
Optical microcavities

Quantum wells

Mirrors

Gallium arsenide

Reflectivity

Refractive index

Polarization

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