Epitaxial growth of n- and p-type ZnCdSe layers and light-emitting diodes

Hiroshi Iwata; Koichi Naniwae; Kenichiro Yashiki

doi:10.1117/12.307611

4 May 1998 Epitaxial growth of n- and p-type ZnCdSe layers and light-emitting diodes

Hiroshi Iwata, Koichi Naniwae, Kenichiro Yashiki

Proceedings Volume 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.307611
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Zn_0.48Cd_0.52Se layers were grown on InP substrates by molecular-beam epitaxy. The n-type carrier concentration was controlled from 3X10¹⁶ cm^-3 to 7X10¹⁸ cm^-3 through the ZnCl₂ source cell temperature. Nitrogen doping was performed using a radio-frequency plasma. Capacitance-voltage measurement showed that the ZnCdSe:N layer was p-type with a net acceptor concentration (Na-Nd) of 3.5X10¹⁶ cm^-3. ZnCdSe p-n homojunction light- emitting diodes (LEDs) was fabricated. Orange luminescence intensity peaking at a wavelength of 590 nm was observed at room temperature. Double-heterostructure LEDs with a ZnSeTe contact layer were also fabricated and a higher luminescence intensity than in the homojunction LEDs was observed. The operating voltage ranged from 15 to 20 volts.

Citation Download Citation

Hiroshi Iwata, Koichi Naniwae, and Kenichiro Yashiki "Epitaxial growth of n- and p-type ZnCdSe layers and light-emitting diodes", Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); https://doi.org/10.1117/12.307611

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