Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy

Dror Sarid; Xiaowei Yao; Richard K. Workman; Charles A. Peterson; Mahmoud Fallahi

doi:10.1117/12.307615

4 May 1998 Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy

Dror Sarid, Xiaowei Yao, Richard K. Workman, Charles A. Peterson, Mahmoud Fallahi

Proceedings Volume 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.307615
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The electronic structure at the interface of GaAs/AlAs multilayers grown by molecular beam epitaxy is investigated on the (110) surface using scanning tunneling microscopy. The valence band bending, which is produced by an interface dipole layer, is observed from cross-sectional profiles exhibiting spike structures. It is found that the transition region of the AlAs/GaAs interface (3.0 - 4.0 nm) is smaller than that of the GaAs/AlAs interface (4.0 - 5.0 nm). Similar spike structures showing a transition region of 3.5 - 4.5 nm are also observed at the GaAs/Al_0.6Ga_0.4As interface.

Citation Download Citation

Dror Sarid, Xiaowei Yao, Richard K. Workman, Charles A. Peterson, and Mahmoud Fallahi "Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy", Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); https://doi.org/10.1117/12.307615

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