Silicon JFETs for cryogenic applications

Naresh C. Das; Sachidananda Babu; Murzy D. Jhabvala

doi:10.1117/12.304475

8 April 1998 Silicon JFETs for cryogenic applications

Naresh C. Das, Sachidananda Babu, Murzy D. Jhabvala

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304475
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

A process for fabrication of low-frequency, low-noise, low- power silicon JFETs for cryogenic operation has been developed. COmmercially available silicon JFETs exhibit very high low frequency and 1/f noise at liquid nitrogen temperature. We report on process optimization and effect of high temperature oxidation and drive-in process on noise performance of these devices. These silicon JFETs were designed for operation at 77K. In this paper, we report the noise performance and its relation to the well-known complex oxygen-vacancy. A center that has a trap level of 0.18 eV below the conduction band. These devices were developed for use in the photo-diode assembly of NASAs Gravity Probe B mission telescope.

Citation Download Citation

Naresh C. Das, Sachidananda Babu, and Murzy D. Jhabvala "Silicon JFETs for cryogenic applications", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304475

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