Mix-and-match interferometric and optical lithographies for nanoscale structures

Saleem H. Zaidi; Steven R. J. Brueck; Thomas A. Hill; Richard N. Shagam

doi:10.1117/12.309575

5 June 1998 Mix-and-match interferometric and optical lithographies for nanoscale structures

Saleem H. Zaidi, Steven R. J. Brueck, Thomas A. Hill, Richard N. Shagam

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309575
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Optical lithography (OL) is the manufacturing base for patterning of semiconductor integrated circuits (IC). Fundamental limits on optical imaging at features below 200- nm potentially limit its continued applicability. Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with dense feature resolution to approximately 50 nm. An important next step is demonstrating the capability of applying IL to ann existing pattern defined by OL. We report on a mix-and-match scheme for writing a critical layer in an electrical linewidth test structure. Two important issues are the accuracy and the overlay of the grids for the two exposure techniques. Moire techniques are used to evaluate the grid absolute accuracy for Il with expanding spherical wavefronts. For a 1-m distance to the wafer plane, the period variation is less than 5 X 10^-5 over a 1 cm² field leading to a placement error of +/- 60 nm over the field. This error scales as the inverse square of the distance to the wafer plane and can be reduced to arbitrarily levels. Collimation will eliminate this systematic error to the extent that lens aberrations are compensated. Preliminary experimental results in qualitative agreement with the analysis are presented.

Citation Download Citation

Saleem H. Zaidi, Steven R. J. Brueck, Thomas A. Hill, and Richard N. Shagam "Mix-and-match interferometric and optical lithographies for nanoscale structures", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309575

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