Paper
29 June 1998 Advanced ARCH resist
N. R. Bantu, J. Marshall, T. Holt, D. Perry, D. Khan
Author Affiliations +
Abstract
Conventional acetal based, chemically amplified DUV photoresists are known to yield unacceptable shrinkage after exposure due to volatile nature of the byproducts generated after acid catalysis at room temperature. This paper mainly demonstrates that all acetal based resists do not produce the same extent of shrinkage. Higher boiling vinyl ether acetal (HBVEA) polymers can potentially be used to completely minimize the shrinkage (< 0.6%) and this value is independent of the blocking levels of the polymer. Dissolution rate in the exposed areas are found to be relatively greater for HBVEA polymers when compared to low boiling vinyl ether acetal polymers under identical conditions. Observed less shrinkage and higher dissolution rate values are attributed to the non-volatile nature of the alcohol generated in the film after photo-acid induced deprotection reaction. HBVEA polymers are demonstrated to resolve 175 nm lines/spaces using 0.53 NA stepper.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. R. Bantu, J. Marshall, T. Holt, D. Perry, and D. Khan "Advanced ARCH resist", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312368
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KEYWORDS
Polymers

Silicon

Catalysis

Semiconducting wafers

Deep ultraviolet

Lithography

Lenses

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