Chemically amplified ArF resists based on cleavable alicyclic group and the absorption band shift method

Naomi Shida; Takeshi Okino; Koji Asakawa; Tohru Ushirogouchi; Makoto Nakase

doi:10.1117/12.312341

29 June 1998 Chemically amplified ArF resists based on cleavable alicyclic group and the absorption band shift method

Naomi Shida, Takeshi Okino, Koji Asakawa, Tohru Ushirogouchi, Makoto Nakase

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312341
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Recent advances in the single-layer resist for forming finer patterns have led us to a search for new resist materials for the ArF excimer laser. We describe a novel, environmentally friendly, single-layer resist based on a menthyl acrylate copolymer protected with a cleavable alicyclic group and the absorption band shift method.

Citation Download Citation

Naomi Shida, Takeshi Okino, Koji Asakawa, Tohru Ushirogouchi, and Makoto Nakase "Chemically amplified ArF resists based on cleavable alicyclic group and the absorption band shift method", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312341

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