Alignment system for ArF excimer-laser-based step-and-scan system

Dohoon Kim; Jong-Soo Kim; Yeung Joon Sohn; Jin Hyuk Kwon; Kag Hyeon Lee; Sang-Soo Choi; Hai Bin Chung; Hyung Joun Yoo; Bo Woo Kim

doi:10.1117/12.310725

29 June 1998 Alignment system for ArF excimer-laser-based step-and-scan system

Dohoon Kim, Jong-Soo Kim, Yeung Joon Sohn, Jin Hyuk Kwon, Kag Hyeon Lee, Sang-Soo Choi, Hai Bin Chung, Hyung Joun Yoo, Bo Woo Kim

Author Affiliations +

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310725
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

ArF excimer laser exposure tool is expected as a workhorse in gigabit DRAM mass production era. It can resolve 0.18 micrometer or finer patterns due to its short wavelength of illumination light. Also, the step-and-repeat photolithography system is changing to more complicated step-and-scan system. On the other hand, this in turn requires alignment system to work to tighter budgets. In the 0.18 micrometer optical lithography performance level, overlay error should be maximum 40 nm. In this paper, we report the theory and design parameters of the alignment system for home made ArF excimer laser based step & scan system. We have examined the advantages of our alignment system, and have implemented a trade-off strategy. Our discussion includes an overview of the alignment system which composed of reticle alignment system, wafer alignment system (off-axis and TTL) and auto focus/leveling system.

Citation Download Citation

Dohoon Kim, Jong-Soo Kim, Yeung Joon Sohn, Jin Hyuk Kwon, Kag Hyeon Lee, Sang-Soo Choi, Hai Bin Chung, Hyung Joun Yoo, and Bo Woo Kim "Alignment system for ArF excimer-laser-based step-and-scan system", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310725

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