Paper
29 June 1998 Applications of enhanced optical proximity correction models
Jack Q. Zhao, Joseph G. Garofalo, James W. Blatchford, Edward Ehrlacher, Ellis Nease
Author Affiliations +
Abstract
The accurate prediction of relevant optical and other processing effects is the essential first element of optical proximity effect (OPC) methodologies. A quasi-empirical modeling technique has been devised. Starting from standard aerial-image energy deposition, an exponential transfer function is employed to account for saturation effects. This is then followed by a double-Gaussian diffusion convolution. Finally, a novel 2-dimensional log-slope model was devised to better predict some DUV processes. The model parameters are derived from a few empirical measurements and a fitting process. The calibrated model is then used by a rule-based OPC package to correct a variety of structures. Efficient verification techniques suitable for large area designs are introduced.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jack Q. Zhao, Joseph G. Garofalo, James W. Blatchford, Edward Ehrlacher, and Ellis Nease "Applications of enhanced optical proximity correction models", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310753
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Optical proximity correction

Deep ultraviolet

Data modeling

Photoresist processing

Process modeling

Calibration

Convolution

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