Paper
13 September 1982 Hybrid Lithography: Mixing Of 10:1 And 1:1 Projection Aligners
Jerris H. Peavey, Stephen Cosentino, Charles Hamner
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Abstract
The mixing of 10:1 direct step on wafer aligner to a 1:1 full mask projection aligner has often been proposed.1 This hybrid alignment scheme offers the advantages of excellent registration and high resolution found in the current steppers in combination with the established throughput and lower cost of the 1:1 projection aligners. This paper reports on fabrication of HMOS circuits using the hybrid technique at one critical layer. Full integration of the automatic global alignment features, field-by-field alignment, process control drop-ins and automatic framing has been accomplished. A technique for comparison of the registration between the conventional and hybrid process will be presented. Considerations of mask and reticle layout will be discussed. The influence of the additional time required for field-by-field alignment in a theoretical model will be presented.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerris H. Peavey, Stephen Cosentino, and Charles Hamner "Hybrid Lithography: Mixing Of 10:1 And 1:1 Projection Aligners", Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); https://doi.org/10.1117/12.933571
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KEYWORDS
Semiconducting wafers

Optical alignment

Photomasks

Reticles

Process control

Copper

Optical lithography

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