Paper
21 August 1998 Ge:Ga far-infrared photoconductor 2D direct hybrid array
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Abstract
Ge:Ga far-IR photoconductor 2D direct hybrid arrays are being developed for application in the focal-plane detectors of the far-IR surveyor, one of the two main instruments of the IR imaging surveyor satellite. The arrays are composed of Ge:Ga photoconductor arrays fabricated on one chip, Si- pMOS readout integrated circuits, and a hybridization of them done by using indium bump technology.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Norihisa Hiromoto, Mikio Fujiwara, Hiroshi Shibai, Takanori Hirao, Takao Nakagawa, and Mitsunobu Kawada "Ge:Ga far-infrared photoconductor 2D direct hybrid array", Proc. SPIE 3354, Infrared Astronomical Instrumentation, (21 August 1998); https://doi.org/10.1117/12.317304
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Cited by 10 scholarly publications.
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KEYWORDS
Sensors

Photoresistors

Metals

Indium

Semiconducting wafers

Germanium

Absorption

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