Laser ablation and deposition of CdSe and CdS on GaAs substrate

G. Perna; V. Capozzi; M. Ambrico; D. Smaldone; R. Martino

doi:10.1117/12.308650

26 May 1998 Laser ablation and deposition of CdSe and CdS on GaAs substrate

G. Perna, V. Capozzi, M. Ambrico, D. Smaldone, R. Martino

Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308650
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France

Abstract

The photoluminescence properties of CdSe and CdS films deposited on GaAs substrate by means of laser ablation technique are studied as a function of temperature. The free excitonic recombination is used to determine the energy gap position in the entire temperature range from 10 to 300 K. Semiempirical models well fit the experimental data, so allowing to determine material dependent parameters, related to exciton-phonon and exciton-impurity scattering.

Citation Download Citation

G. Perna, V. Capozzi, M. Ambrico, D. Smaldone, and R. Martino "Laser ablation and deposition of CdSe and CdS on GaAs substrate", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308650

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