Laser spectroscopy of silicon nanostructures

Yoshihiko Kanemitsu

doi:10.1117/12.308636

26 May 1998 Laser spectroscopy of silicon nanostructures

Yoshihiko Kanemitsu

Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308636
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France

Abstract

We discuss the mechanism of efficient photoluminescence (PL) from Si nanocrystals. Luminescence properties of SiO₂- capped Si nanocrystals are different from those of H- passivated Si nanocrystals. The size-dependence of PL properties and resonantly excited PL spectra of SiO₂- capped Si nanocrystals indicate that excitons are localized at the interface between c-Si and SiO₂ surface layer. The TO-phonon related structure in resonantly excited luminescence is clearly observed in H-passivated Si nanocrystals. H-passivated Si nanocrystals show their crystalline nature, while the oxidized Si nanocrystals show their disorder nature. The luminescence properties of Si nanocrystals are discussed.

Citation Download Citation

Yoshihiko Kanemitsu "Laser spectroscopy of silicon nanostructures", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308636

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