Paper
1 September 1998 Ion projection lithography
John Melngailis, Hans Loschner, Gerhard Stengl, Ivan L. Berry, Alfred A. Mondelli, Gerhard Gross
Author Affiliations +
Abstract
In spite of the comparatively modest level of effort devoted to ion projection lithography, the results obtained so far indicate that the technology is highly promising. Accordingly, a $36M program has been launched in Europe to develop a full field, IPL process tool.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John Melngailis, Hans Loschner, Gerhard Stengl, Ivan L. Berry, Alfred A. Mondelli, and Gerhard Gross "Ion projection lithography", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328849
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CITATIONS
Cited by 11 scholarly publications.
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KEYWORDS
Photomasks

Ions

Silicon

Semiconducting wafers

Distortion

Optical alignment

Ion beams

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