Molecular beam epitaxial growth of BSCCO and Bi-based oxides: self-limiting growth of the Bi element

Shigeki Sakai; S. Migita; Hiroyuki Ota; H. Fujino; Yuji Kasai; Tsunehiro Oohira; H. Matsuhata; Koji Kajimura

doi:10.1117/12.335872

22 December 1998 Molecular beam epitaxial growth of BSCCO and Bi-based oxides: self-limiting growth of the Bi element

Shigeki Sakai, S. Migita, Hiroyuki Ota, H. Fujino, Yuji Kasai, Tsunehiro Oohira, H. Matsuhata, Koji Kajimura

Proceedings Volume 3481, Superconducting and Related Oxides: Physics and Nanoengineering III; (1998) https://doi.org/10.1117/12.335872
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

Self-limiting function of Bi element in connection with experimental results of sticking coefficients of constituent atoms of BSCCO is described. Molecular beam epitaxial growth of Bi₂Sr₂CuO_x (Bi2201) and Bi₄Ti₃O₁₂ (BIT) is demonstrated using this function. A further advanced method and its growth results for Bi₂Sr₂CaCu₂O_x (Bi2212) and Bi₂Sr₂Ca₂Cu₃O_x (Bi2223) growth are shown, where a chemical reaction between Bi2201 molecular layer and one or two monolayers of Ca and Cu deposited on Bi2201 is used. Estimation by means of X-ray diffraction, reflection high-energy electron diffraction, and atomic force microscopy shows excellent quality of the films obtained. Heteroepitaxial growth of BIT/Bi2201 using the self- limiting function of Bi is also done.

Citation Download Citation

Shigeki Sakai, S. Migita, Hiroyuki Ota, H. Fujino, Yuji Kasai, Tsunehiro Oohira, H. Matsuhata, and Koji Kajimura "Molecular beam epitaxial growth of BSCCO and Bi-based oxides: self-limiting growth of the Bi element", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335872

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