Paper
4 December 1998 Red AlGaInP lasers: tunable and powerful
Heinz Schweizer, N. Lichtenstein, H. P. Gauggel, Justus Kuhn, R. Hofmann, R. Winterhoff, Christian Geng, A. Mortiz, Andreas Hangleiter, Ferdinand Scholz
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Abstract
In this article fabrication techniques and the analysis of AlGaInP semiconductor lasers for single mode emission and high power emission will be reported. Special emphasis will be spent on the appropriate vertical and longitudinal device structures. Furthermore we discuss low damage dry etching and epitaxial regrowth of DFB laser structures. The devices investigated are DBR- DFB- and MOPA-lasers.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heinz Schweizer, N. Lichtenstein, H. P. Gauggel, Justus Kuhn, R. Hofmann, R. Winterhoff, Christian Geng, A. Mortiz, Andreas Hangleiter, and Ferdinand Scholz "Red AlGaInP lasers: tunable and powerful", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328678
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KEYWORDS
Waveguides

Oscillators

Laser damage threshold

Resonators

Semiconductor lasers

Optical amplifiers

Tunable lasers

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