Visible quantum dots under reversed bias

Fang Yang; Geof C. Aers; Karin Hinzer; Yan Feng; Simon Fafard; John P. McCaffrey; N. Sylvain Charbonneau; Anthony J. SpringThorpe

doi:10.1117/12.328735

4 December 1998 Visible quantum dots under reversed bias

Fang Yang, Geof C. Aers, Karin Hinzer, Yan Feng, Simon Fafard, John P. McCaffrey, N. Sylvain Charbonneau, Anthony J. SpringThorpe

Author Affiliations +

Proceedings Volume 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications; (1998) https://doi.org/10.1117/12.328735
Event: 1998 International Conference on Applications of Photonic Technology, 1998, Ottawa, Canada

Abstract

Time-resolved photoluminescence (PL), steady-state PL, and electro-luminescence techniques have been used to characterize the carrier relaxation processes and carrier escape mechanisms in a self-assembled AlInAs quantum dots (SAQD) p-i-n laser structure under reversed bias. The measurements were performed between 5 K and room temperature on a ring mesa sample as a function of bias. At 100 K, the PL decay time originating from the SAQD decreases with increasing reversed bias from approximately 450 ps under flat band condition to approximately 150 ps for biases of -4 V. The data can be explained by a simple model based on electron recombination in the quantum dots or escape our of the dots. The escape can occur by one of three possible routes: direct tunneling out of the distribution of electron excited state level, thermally assisted tunneling of ground state electrons through the upper electron excited states or thermionic emission to the wetting layer.

Citation Download Citation

Fang Yang, Geof C. Aers, Karin Hinzer, Yan Feng, Simon Fafard, John P. McCaffrey, N. Sylvain Charbonneau, and Anthony J. SpringThorpe "Visible quantum dots under reversed bias", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328735

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available