Paper
19 August 1998 Linewidth in microdisk laser
Yongqiang Ning, Sheng Li Wu, Lijun Wang, Jiuling Lin, Dehui Fu, Yun Liu, Dongjiang Wu, Yixin Jin
Author Affiliations +
Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319611
Event: Photonics China '98, 1998, Beijing, China
Abstract
Among the attractive features of microcavity lasers for practical applications are the potential for reduced thresholds and the ability to design a mode structure with nearly ideal single mode operation. One of the most important parameters for semiconductor lasers is the linewidth. Generally the linewidth in semiconductor lasers is proportional to the inverse of the output power. In this work, we examine the lasing behavior of microdisk lasers, consisting of InGaP/InGaAsP/InP MQW structure, optically pumped at liquid nitrogen temperature by Ar ion laser. A decrease of threshold of the microdisk laser is observed. The linewidth of the lasing spectrum is measured at various pumping level. It turns out that the measured linewidth is broad and in the range of nanometer. The linewidth does not display the usual inverse power dependence, i.e., Schalow- Townes linewidth narrowing.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongqiang Ning, Sheng Li Wu, Lijun Wang, Jiuling Lin, Dehui Fu, Yun Liu, Dongjiang Wu, and Yixin Jin "Linewidth in microdisk laser", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319611
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KEYWORDS
Semiconductor lasers

Laser damage threshold

Liquids

Semiconductors

Nitrogen

Optical microcavities

Optical pumping

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