Paper
12 August 1998 Silicon field emitter microtip array fabricated by ion-beam etching
Xinyu Zhang, Xinjian Yi, Miao He, Xing-Rong Zhao
Author Affiliations +
Abstract
A relatively simple and effective method to fabricate 128- X 128-element emission microtips array on the surface of silicon substrate is proposed. The method mainly involves photolithographic process and argon ion beam etching. Typical center-to-center spacing of microtips fabricated is 50 micrometer, typical height is about 11 micrometer, and typical sharpness is about 9 sr. The scanning electron microscope analysis and the surface style measurement are presented for the surface morphology of two kinds of silicon emitters microtips (square-based pyramidal microtips and circle-based cone microtips) and circle microtips array. The experiments show that the technique used can be applied to fabricate silicon emitter microtips array and circle microtips array of larger area.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinyu Zhang, Xinjian Yi, Miao He, and Xing-Rong Zhao "Silicon field emitter microtip array fabricated by ion-beam etching", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); https://doi.org/10.1117/12.317990
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon

Etching

Ion beams

Photoresist materials

Argon

Ions

Optical lithography

Back to Top