Analysis of the quantum efficiency of a GaInAsSb photovoltaic detector

Yuan Tian; Tianming Zhou; BaoLin Zhang; Hong Jiang; Yixin Jin

doi:10.1117/12.318065

11 August 1998 Analysis of the quantum efficiency of a GaInAsSb photovoltaic detector

Yuan Tian, Tianming Zhou, BaoLin Zhang, Hong Jiang, Yixin Jin

Proceedings Volume 3553, Detectors, Focal Plane Arrays, and Imaging Devices II; (1998) https://doi.org/10.1117/12.318065
Event: Photonics China '98, 1998, Beijing, China

Abstract

In this paper, the theoretical analysis of the quantum efficiency in an n⁺-p GaInAsSb IR photovoltaic detector is presented. The investigations of material parameters and the direction of the incident light are carried out for the near room temperature and 2.5 micrometers wavelength. The analysis results show that the direction of the incident light effects on the quantum efficiency. In addition, the quantum efficiency strongly depends on the carrier concentration in the p region. Moreover, other material parameters also effect on the quantum efficiency.

Citation Download Citation

Yuan Tian, Tianming Zhou, BaoLin Zhang, Hong Jiang, and Yixin Jin "Analysis of the quantum efficiency of a GaInAsSb photovoltaic detector", Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); https://doi.org/10.1117/12.318065

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