Uniformity of GaInAsP/GaInAsP multiquantum well structures grown in multiwafer reactors

Markus Deufel; Michael Heuken; Rainer Beccard; Holger Juergensen; Egbert Woelk

doi:10.1117/12.344476

14 April 1999 Uniformity of GaInAsP/GaInAsP multiquantum well structures grown in multiwafer reactors

Markus Deufel, Michael Heuken, Rainer Beccard, Holger Juergensen, Egbert Woelk

Proceedings Volume 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III; (1999) https://doi.org/10.1117/12.344476
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

The increasing demand for sophisticated laser devices for high speed telecommunication systems, CATV, multimedia or printing markets requires the application of multiwafer MOVPE systems. To meet the targets of these markets, the Planetary Reactor^TM as well proven production tool was used to fabricate InGaAsP single and multilayer test structures with outstanding uniformity.

Citation Download Citation

Markus Deufel, Michael Heuken, Rainer Beccard, Holger Juergensen, and Egbert Woelk "Uniformity of GaInAsP/GaInAsP multiquantum well structures grown in multiwafer reactors", Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); https://doi.org/10.1117/12.344476

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