630-nm laser diode array for laser-beam printer formed by impurity diffusion

Shin'ichi Nakatsuka; Susumu Saito

doi:10.1117/12.344530

1 April 1999 630-nm laser diode array for laser-beam printer formed by impurity diffusion

Shin'ichi Nakatsuka, Susumu Saito

Proceedings Volume 3628, In-Plane Semiconductor Lasers III; (1999) https://doi.org/10.1117/12.344530
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We have developed a planar laser array that emits at a wavelength of 630 nm. The fabrication of this device relies on the diffusion of Zn into a conventional AlGaInP quantum-well heterostructure. Direct zinc diffusion into the AlGaInP layer forms a region with anomalously low carrier density of less than 10¹⁶ cm^-3. This provides current confinement and isolation between the elements. Zn diffusion into GaAs produces a region with a high carrier concentration that reduces the contact resistance between the GaAs cap layer and the electrode. Therefore, both a low resistive contact area and a high resistive confinement area can be formed by a single self-aligned diffusion process. This device structure requires only planar processes and a single crystal growth step. Therefore it is convenient for fabricating highly functional devices such as multiple-element laser arrays. The threshold current of each array element with a cavity length of 300 micrometer was 50 to 70 mA. Even without intentional isolation, no leakage current was observed from the current voltage characteristics. The cavity loss and intrinsic threshold current density determined from a series of devices with various cavity lengths, were 6 cm^-1 and 1.6 kA/cm², respectively. The threshold current density was close to that of a conventional buried-ridge structure and the cavity loss was one-third that of the conventional structure.

Citation Download Citation

Shin'ichi Nakatsuka and Susumu Saito "630-nm laser diode array for laser-beam printer formed by impurity diffusion", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344530

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