Paper
1 April 1999 High-optical-intensity 2D AlGaAs laser arrays
Yuji Nishikawa, Hiroshi Takigawa
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Abstract
High power diode laser arrays have been demonstrated using relatively simple manufactured water-cooled packages. The layer structure of the graded-index separate confinement heterostructure (GRIN-SCH) using AlGaAs material systems were employed for the 0.8 micrometer-emission. The laser bars have broad-area stripes (70 micrometer) with a pitch of 150 micrometer and a cavity length of 500 micrometer. A maximum power of 40 W per 1-cm-laser-bar was obtained for the layer structure with 10-nm-thick quantum well. We stack 15 laser bar modules (laser block) and fabricated two-dimensional laser arrays with 45 laser bars, consisting of 3 laserblocks. The total output power is about 680 W, which corresponds to an intensity of about 110 W/cm2. The reliability data of 200- W laser blocks are shown to be about 5000 hours extrapolated by 2000 hours' data.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuji Nishikawa and Hiroshi Takigawa "High-optical-intensity 2D AlGaAs laser arrays", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344516
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Cited by 4 scholarly publications.
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KEYWORDS
Quantum wells

Resistance

Reliability

Copper

Silicon carbide

Quantum efficiency

Laser bonding

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