High-power InGaAs/AlGaAs laser diodes with decoupled confinement heterostructure

Tsuyoshi Fujimoto; Yumi Yamada; Yoshikazu Yamada; Atsushi Okubo; Yasuo Oeda; Kiyofumi Muro

doi:10.1117/12.344544

1 April 1999 High-power InGaAs/AlGaAs laser diodes with decoupled confinement heterostructure

Tsuyoshi Fujimoto, Yumi Yamada, Yoshikazu Yamada, Atsushi Okubo, Yasuo Oeda, Kiyofumi Muro

Proceedings Volume 3628, In-Plane Semiconductor Lasers III; (1999) https://doi.org/10.1117/12.344544
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

High power InGaAs/AlGaAs laser diodes with decoupled confinement heterostructure (DCH) have been developed. Almost Al-free waveguide and cladding layers were realized in 980 nm DCH laser diodes without degrading temperature characteristics. The extremely low electrical and thermal resistances allowed high power and efficient operation. The maximum CW output power as high as 9.5 W was obtained with 100-micrometer-aperture broad area. DCH laser diode. The maximum efficiency was 55% at 2.5 W. The series resistance of 1.8-mm long cavity was 0.04(Omega) and internal loss was 1.5 cm^-1. The characteristic temperature (T₀) was 155 K. The substantially Al-free DCH structure enables easy fabrication of various index guided laser diodes. We have developed two types of real index guided laser diodes, buried- ridge and self-aligned structure. Buried-ridge laser diode presented 1.3 W maximum CW output power and 500 mW single mode operation. Self-aligned structure laser diodes showed 1.4 W CW output power and 700 mW single mode operation with better reproducibility.

Citation Download Citation

Tsuyoshi Fujimoto, Yumi Yamada, Yoshikazu Yamada, Atsushi Okubo, Yasuo Oeda, and Kiyofumi Muro "High-power InGaAs/AlGaAs laser diodes with decoupled confinement heterostructure", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344544

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