Paper
7 April 1999 Characteristics of a superlattice infrared detector and comparison with QWIP
Mao-Chieh Hsu, Y.F. Hsu, Kuan H. Chen
Author Affiliations +
Abstract
A 15-period GaAs/Al0.3Ga0.7As superlattice infrared photodetector (SLIP) is presented. A 1500 Angstrom wide Al0.22Ga0.78As blocking barrier is introduced to reduce the dark current. The measured noise power spectral density of dark current at 77 K shows characteristics of in2 equals 2qId rather than the generation-recombination noise. The spectral response is between 8 - 10 micrometer with (lambda) p equals 9.3 micrometer. Background limited performance can be achieved up to 65 K. Assuming the noise of background photocurrent to be 2qIpc, we estimate D*BLIP equals 1.5 X 1010 cm(root)Hz/W. At 77 K, the detectivity is D* equals 3.5 X 109cm(root)Hz/W with the bias voltage of 0.1 V. In comparison with conventional QWIPS, our SLIP has the advantage of higher performance at low bias voltage and lower power consumption.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mao-Chieh Hsu, Y.F. Hsu, and Kuan H. Chen "Characteristics of a superlattice infrared detector and comparison with QWIP", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344550
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KEYWORDS
Quantum well infrared photodetectors

Superlattices

Sensors

Infrared detectors

Infrared radiation

Stereolithography

Photodetectors

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