Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications

Jedon D. Kim; Hooman Mohseni; Joseph S. Wojkowski; J. J. Lee; Manijeh Razeghi

doi:10.1117/12.344571

7 April 1999 Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications

Jedon D. Kim, Hooman Mohseni, Joseph S. Wojkowski, J. J. Lee, Manijeh Razeghi

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344571
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

In this paper, we report on the growth and characterization of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications. The fabrication and characterization of photodetectors from the grown layers are also reported. The photovoltaic and photoconductive devices were grown on (100) GaAs and Si substrates, respectively, using molecular beam epitaxy (MBE). The composition of InAs_1-xSb_x layers was 0.95 in both cases and cut-off wavelength of 7 - 8 micrometer has been obtained. At 300 K, the photovoltaic detectors on GaAs substrates resulted in a sharp cut-off wavelength of 7.5 micrometer with a peak responsivity as high as 0.32 V/W at 6.5 micrometer. For the photoconductive detectors on Si substrates, cut-off wavelength of 8 micrometer has been observed with a responsivity of 6.3 X 10^-2 V/W at 7 micrometer under an electric field of 420 V/m.

Citation Download Citation

Jedon D. Kim, Hooman Mohseni, Joseph S. Wojkowski, J. J. Lee, and Manijeh Razeghi "Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344571

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