Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Patrick Kung; Danielle Walker; Peter M. Sandvik; Melissa Hamilton; Jacqueline E. Diaz; Il Hwan Lee; Manijeh Razeghi

doi:10.1117/12.344586

7 April 1999 Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Patrick Kung, Danielle Walker, Peter M. Sandvik, Melissa Hamilton, Jacqueline E. Diaz, Il Hwan Lee, Manijeh Razeghi

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344586
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We report the growth and characterization of Schottky based metal-semiconductor-metal ultraviolet photodetectors fabricated on lateral epitaxially overgrown GaN films. The lateral epitaxial overgrowth of GaN was carried out on basal plane sapphire substrates by low pressure metalorganic chemical vapor deposition and exhibited lateral growth rates more than 5 times as high as vertical growth rates. The spectral responsivity, the dependence on bias voltage, on incident optical power, and the time response of these photodetectors have been characterized. Two detector orientations were investigated: one with the interdigitated finger pattern parallel and the other perpendicular to the underlying SiO_x mask stripes.

Citation Download Citation

Patrick Kung, Danielle Walker, Peter M. Sandvik, Melissa Hamilton, Jacqueline E. Diaz, Il Hwan Lee, and Manijeh Razeghi "Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344586

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