Preparation of SiO2 on  an InP substrate by a sol-gel technique for integrated optics

Jian Liu; Yee Loy Lam; Yuen Chuen Chan; Yan Zhou; Boon Siew Ooi

doi:10.1117/12.348298

30 April 1999 Preparation of SiO₂ on an InP substrate by a sol-gel technique for integrated optics

Jian Liu, Yee Loy Lam, Yuen Chuen Chan, Yan Zhou, Boon Siew Ooi

Proceedings Volume 3631, Optoelectronic Integrated Circuits and Packaging III; (1999) https://doi.org/10.1117/12.348298
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

In this paper, we report our success in depositing sol-gel derived silica films on InP using multiple spin coating and rapid thermal processing. The effect of rapid thermal process temperature and time duration on the property of the film is studied. The dependence of the single layer thickness as well as its refractive index upon the film preparation parameters have been obtained and are compared with that on silicon substrates. As a result of the study, a crack-free SiO₂ film with a thickness of 0.5 micrometers has been successfully deposited on InP at a processing temperature of 450 degrees C. We believe that our experimental result has indicated that it is possible to fabricate hybridized integrated optics devices on compound semiconductors through the sol-gel route.

Citation Download Citation

Jian Liu, Yee Loy Lam, Yuen Chuen Chan, Yan Zhou, and Boon Siew Ooi "Preparation of SiO₂ on an InP substrate by a sol-gel technique for integrated optics", Proc. SPIE 3631, Optoelectronic Integrated Circuits and Packaging III, (30 April 1999); https://doi.org/10.1117/12.348298

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