Paper
11 June 1999 Acid diffusion and evaporation in chemically amplified resists
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Abstract
A chemically amplified resist containing a basic monomer, 3- (t-butoxycarbonyl)-1-vinylcaprolactam (BCVC), in the matrix polymer was synthesized with various monomer feed ratios. Diffusion and evaporation of photogenerated acid in the copolymer films were investigate for various fractions of the basic units in copolymers. It is found that only acid surviving deactivation by the BCVC units diffuses into unexposed areas and evaporates for the copolymer film to bleach the indicator film. Evaporation of a low molecular weight basic additive is also examined. Whereas the low molecular weight basic additive evaporated during baking, the basic monomer units in the copolymer did not evaporate at all due to covalent bonding to polymer backbone chain. Thus, the copolymer with the basic monomer can control the acid diffusion and evaporation effectively. The new resists system enables us to form fine patterns even after post- exposure delay of 2 h without any additional treatment.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-Baek Kim, Young-Gil Kwon, Jae-Hak Choi, and Min-Ho Jung "Acid diffusion and evaporation in chemically amplified resists", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350236
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Cited by 1 scholarly publication.
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KEYWORDS
Diffusion

Polymers

Chemically amplified resists

Semiconducting wafers

Silicon

Absorbance

Deep ultraviolet

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