Evaluation of electron beam stabilization for ion implant processing

Stephen Jack Buffat; Bee Kickel; B. Philipps; J. Adams; Matthew F. Ross; Jason P. Minter; Trey Marlowe; Selmer S. Wong

doi:10.1117/12.350167

11 June 1999 Evaluation of electron beam stabilization for ion implant processing

Stephen Jack Buffat, Bee Kickel, B. Philipps, J. Adams, Matthew F. Ross, Jason P. Minter, Trey Marlowe, Selmer S. Wong

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350167
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

With the integration of high energy ion implant processes into volume CMOS manufacturing, the need for thick resist stabilization to achieve a stable ion implant process is critical. With new photoresist characteristics, new implant end station characteristics arise. The resist outgassing needs to be addressed as well as the implant profile to ensure that the dosage is correct and the implant angle does not interfere with other underlying features. This study compares conventional deep-UV/thermal with electron beam stabilization. The electron beam system used in this study utilizes a flood electron source and is a non-thermal process. These stabilization techniques are applied to a MeV ion implant process in a CMOS production process flow.

Citation Download Citation

Stephen Jack Buffat, Bee Kickel, B. Philipps, J. Adams, Matthew F. Ross, Jason P. Minter, Trey Marlowe, and Selmer S. Wong "Evaluation of electron beam stabilization for ion implant processing", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350167

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