Paper
11 June 1999 Low-polydispersity novolak resins for i-line resists
Stan F. Wanat, M. Dalil Rahman, Dana L. Durham, Douglas S. McKenzie, Michelle M. Cook
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Abstract
Low polydispersity novolak resins were prepared in a sequential process where low molecular weight (Mw) oligomers were first synthesized in a preliminary stp followed by a second condensation with preformed bis-hydroxymethyl derivatives of phenolic starting materials. Resins prepared in this way were found to have polydispersities comparable to that of fractionated resins made in the standard resin synthetic process. The sequential process afforded higher yields of usable resins since no low Mw fractions were isolated and discarded. In several instances, unique bis- hydroxymethyl phenol monomers or monomer/dimmer mixtures were prepared for use in making the low dispersity resins. These compounds were further condensed with the products of the initially prepared low Mw resins in a second acid catalyzed condensation.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stan F. Wanat, M. Dalil Rahman, Dana L. Durham, Douglas S. McKenzie, and Michelle M. Cook "Low-polydispersity novolak resins for i-line resists", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350169
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Cited by 3 scholarly publications.
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KEYWORDS
Carbon

Lithography

Crystals

Mercury

Solids

Chemical species

Control systems

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