Applied electrostatic parallelogram actuators for microwave switches by standard CMOS process

Kaihsiang Yen; Chienliu Chang; Peizen Chang; Jinghung Chiou; Jenn-Yi Chen; Hunghsuan Lin

doi:10.1117/12.341171

10 March 1999 Applied electrostatic parallelogram actuators for microwave switches by standard CMOS process

Kaihsiang Yen, Chienliu Chang, Peizen Chang, Jinghung Chiou, Jenn-Yi Chen, Hunghsuan Lin

Proceedings Volume 3680, Design, Test, and Microfabrication of MEMS and MOEMS; (1999) https://doi.org/10.1117/12.341171
Event: Design, Test, and Microfabrication of MEMS/MOEMS, 1999, Paris, France

Abstract

This work fabricates a laminated-suspension microwave switch using the conventional CMOS process. The proposed microwave switch is fully compatible with an IC foundry service, and the post-process is completed with maskless dry-etching. In addition, the switch only requires a low dc voltage of around 18 V for electrostatic traction. This novel design corresponds to the 0.6 micrometers 3-metal CMOS process. A micromachined microwave switch consists of two electrostatic parallelogram actuators, two T-type connectors and one coplanar waveguide (CPW) on p-type silicon substrate. The microstructures are suspended over silicon substrate by maskless dry-etching oxide and silicon. Without an applied voltage, the actuators do not affect the CPW, accounting for why T-type connectors of actuators do not couple to microwave propagation. With an applied voltage, dc voltage is applied to the actuators to make T-type connectors contact with the signal line of CPW. The capacitance coupling becomes significantly larger than the first one to intercept microwave propagation.

Citation Download Citation

Kaihsiang Yen, Chienliu Chang, Peizen Chang, Jinghung Chiou, Jenn-Yi Chen, and Hunghsuan Lin "Applied electrostatic parallelogram actuators for microwave switches by standard CMOS process", Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); https://doi.org/10.1117/12.341171

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