Characterization, development, and implemenation of multiplaten in-situ rate monitor (ISRM) control for chemical mechanical planarization in ASIC manufacturing

Frank H. Szarka; John H. Givens; David Easterday

doi:10.1117/12.346248

23 April 1999 Characterization, development, and implemenation of multiplaten in-situ rate monitor (ISRM) control for chemical mechanical planarization in ASIC manufacturing

Frank H. Szarka, John H. Givens, David Easterday

Author Affiliations +

Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346248
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

One of the main struggles in CMP engineering has been how to implement a process control methodology and still have a manufacturable and/or cost-effective process flow. The need for insitu rate monitor (ISRM) control has been well recognized. Variations associated with device/product types, incoming films, consumables and equipment must be accounted for in the setup ofthe CMP process. However, the common engineering practice has been to average the response through the use of batch processing. Batch processing in CMP requires frequent off-line wafer measurements or the acceptance of lower process yield. Both consequences are unacceptable for wafer costs in today's marketplace. Whereas, with the use of endpoint technology in CMP, engineering can provide a customized process for each wafer. This paper will present the characterization, development and implementation of ISRM control of dielectric CMP in an ASIC manufacturing environment. The details concerning the setup of optical interferometry and multi-platen CMP monitoring will be described. Pattern density differences, time to planarization, changes in polish rates and or uniformities, incoming film differences, consumable variations and equipment drift will be visualized by ISRM. And, finally, the impact of ISRM on manufacturability, process yield and probe yield will be quantified.

Citation Download Citation

Frank H. Szarka, John H. Givens, and David Easterday "Characterization, development, and implemenation of multiplaten in-situ rate monitor (ISRM) control for chemical mechanical planarization in ASIC manufacturing", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); https://doi.org/10.1117/12.346248

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