Local study of a double hetero-junction laser diode by apertureless scanning near-field optical microscopy

Gregory Wurtz; Renaud Bachelot; Pascal Royer

doi:10.1117/12.354850

19 July 1999 Local study of a double hetero-junction laser diode by apertureless scanning near-field optical microscopy

Gregory Wurtz, Renaud Bachelot, Pascal Royer

Proceedings Volume 3749, 18th Congress of the International Commission for Optics; (1999) https://doi.org/10.1117/12.354850
Event: ICO XVIII 18th Congress of the International Commission for Optics, 1999, San Francisco, CA, United States

Abstract

We studied locally a double hetero-junction GaAs/GaAlAs laser diode by apertureless Scanning Near-field Optical Microscopy. The optical probe used is a tungsten tip vibrating (at frequency f) perpendicularly to the emitting surface. Suitable experimental parameters permitting us to accede to near-field information have been defined. Their respective importance in the extraction of near-field information is shown and discussed.

Citation Download Citation

Gregory Wurtz, Renaud Bachelot, and Pascal Royer "Local study of a double hetero-junction laser diode by apertureless scanning near-field optical microscopy", Proc. SPIE 3749, 18th Congress of the International Commission for Optics, (19 July 1999); https://doi.org/10.1117/12.354850

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